Abstract: The p+–n–n−–n+ structure, known as Hi–Lo structure, was investigated in gallium nitride (GaN) single-drift-region (SDR) impact ionization avalanche transit-time (IMPATT) diodes to improve ...
Abstract: An integrated back-to-back SiC Zener diode is proposed and designed as an asymmetric bidirectional voltage clamp between the gate and source to protect the gate oxide of SiC MOSFET from the ...
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