Abstract: SiC-based n-channel and p-channel MOSFETs fabricated by Fraunhofer IISB SiC CMOS technology are characterized from room temperature up to 300°C. The behaviors of these low voltage devices ...
Abstract: A low-power active gate driver (AGD) design becomes critical in battery-based power conversion systems (DCDC converters) to extend battery life. This paper proposes an integrated active gate ...
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