Abstract: This study aimed to evaluate the reliability of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) under extremely high gate voltage stress. The research ...
Abstract: This study aims to explore the solder fatigue lifetime of a developed high-voltage (1.7 kV/100 A) SiC power MOSFET module for on-board chargers (OBCs) subjected to power cycling test (PCT) ...
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